FDB082N15A mosfet equivalent, mosfet.
* RDS(on) = 6.7 mΩ (Typ.) @ VGS = 10 V, ID = 75 A
* Fast Switching Speed
* Low Gate Charge, QG = 64.5 nC (Typ.)
* High Performance Trench Technology for E.
* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor drives and U.
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
* Synchronous Rectification f.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 646.78KB)